molecular beam epitaxy

molecular beam epitaxy
 Molecular Beam Epitaxy
 Молекулярно-лучевая эпитаксия (МЛЭ)
  Процесс и технология осаждения эпитаксиальных пленок полупроводников путем испарения материалов при низком давлении. Применяется для изготовления сложных структур. Позволяет получать многослойные эпитаксиально выращенные материалы с высокой точностью контроля толщины и стехиометрии слоев.

Толковый англо-русский словарь по нанотехнологии. - М.. . 2009.

Смотреть что такое "molecular beam epitaxy" в других словарях:

  • Molecular-beam epitaxy — (MBE), is one of several methods of depositing single crystals. It was invented in the late 1960s at Bell Telephone Laboratories by J. R. Arthur and Alfred Y. Cho.MethodMolecular beam epitaxy takes place in high vacuum or ultra high vacuum (10−8… …   Wikipedia

  • Molecular beam epitaxy — A simple sketch showing the main components and rough layout and concept of the main chamber in a Molecular Beam Epitaxy system Molecular beam epitaxy (MBE) is one of several methods of depositing single crystals. It was invented in the late… …   Wikipedia

  • molecular beam epitaxy — noun a technique, used in the production of thin films of ultra pure semiconductors, that grows the film by condensation of evaporated atoms …   Wiktionary

  • molecular beam epitaxy — noun : a process for manufacturing microelectronic devices by depositing very thin layers of material on a substrate crystal one layer of molecules at a time …   Useful english dictionary

  • silicon molecular-beam epitaxy — molekulinė silicio epitaksija statusas T sritis radioelektronika atitikmenys: angl. silicon molecular beam epitaxy vok. Silizium Molekularstrahlepitaxie, f rus. молекулярно пучковая эпитаксия кремния, f pranc. épitaxie de silicium par jet… …   Radioelektronikos terminų žodynas

  • Chemical beam epitaxy — (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III V semiconductor systems. This form of epitaxial growth is performed in an ultrahigh vacuum system. The reactants are in the form of molecular… …   Wikipedia

  • chemical beam epitaxy — noun a form of molecular beam epitaxy that uses a gaseous source …   Wiktionary

  • Epitaxy — refers to the method of depositing a monocrystalline film on a monocrystalline substrate. The deposited film is denoted as epitaxial film or epitaxial layer. The term epitaxy comes from a Greek root ( epi above and taxis in ordered manner ) which …   Wikipedia

  • epitaxy — /ep i tak see/, n., pl. epitaxies. Crystall. epitaxis. * * * ▪ crystallography       the process of growing a crystal of a particular orientation on top of another crystal, where the orientation is determined by the underlying crystal. The… …   Universalium

  • Ion Beam Mixing — is a process for adhering two multilayers, especially a substrate and deposited surface layer. The process involves bombarding layered samples with doses of ion radiation in order to promote mixing at the interface, and generally serves as a… …   Wikipedia