molecular layer epitaxy


molecular layer epitaxy
 Molecular Layer Epitaxy
 Молекулярная послойная эпитаксия
  Метод получения кристаллических слоев полупроводниковых материалов сложного состава с высоким кристаллографическим совершенством.

Толковый англо-русский словарь по нанотехнологии. - М.. . 2009.

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  • Molecular-beam epitaxy — (MBE), is one of several methods of depositing single crystals. It was invented in the late 1960s at Bell Telephone Laboratories by J. R. Arthur and Alfred Y. Cho.MethodMolecular beam epitaxy takes place in high vacuum or ultra high vacuum (10−8… …   Wikipedia

  • Molecular beam epitaxy — A simple sketch showing the main components and rough layout and concept of the main chamber in a Molecular Beam Epitaxy system Molecular beam epitaxy (MBE) is one of several methods of depositing single crystals. It was invented in the late… …   Wikipedia

  • molecular beam epitaxy — noun : a process for manufacturing microelectronic devices by depositing very thin layers of material on a substrate crystal one layer of molecules at a time …   Useful english dictionary

  • Epitaxy — refers to the method of depositing a monocrystalline film on a monocrystalline substrate. The deposited film is denoted as epitaxial film or epitaxial layer. The term epitaxy comes from a Greek root ( epi above and taxis in ordered manner ) which …   Wikipedia

  • epitaxy — /ep i tak see/, n., pl. epitaxies. Crystall. epitaxis. * * * ▪ crystallography       the process of growing a crystal of a particular orientation on top of another crystal, where the orientation is determined by the underlying crystal. The… …   Universalium

  • Atomic Layer Deposition — Die Atomlagenabscheidung (engl. atomic layer deposition, ALD) ist ein stark verändertes CVD Verfahren zur Abscheidung von dünnen Schichten. Verschiedene Namen ein Prinzip, die Atomlagenabscheidung[1] Bezeichnung Abkürzung Atomic layer deposition… …   Deutsch Wikipedia

  • Chemical beam epitaxy — (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III V semiconductor systems. This form of epitaxial growth is performed in an ultrahigh vacuum system. The reactants are in the form of molecular… …   Wikipedia

  • Metalorganic vapour phase epitaxy — (MOVPE), also known as organometallic vapour phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method of epitaxial growth of materials, especially compound semiconductors from the surface… …   Wikipedia

  • Wetting layer — In experimental physics, a wetting layer is a initial layer of atoms that is epitaxially grown on a surface upon which self assembled quantum dots or thin films are created. The atoms composing a wetting layer can be semimetallic… …   Wikipedia

  • молекулярная послойная эпитаксия —  Molecular Layer Epitaxy  Молекулярная послойная эпитаксия   Метод получения кристаллических слоев полупроводниковых материалов сложного состава с высоким кристаллографическим совершенством …   Толковый англо-русский словарь по нанотехнологии. - М.